DocumentCode :
2172630
Title :
DC and AC characteristics of HBTs with different base width
Author :
Wang, Che-Ming ; Hsin, Yue-Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
185
Lastpage :
187
Abstract :
This paper discusses the DC and AC characteristics of InGaP/GaAs HBTs with different base width from 1.2 μm to 2.0 μm. There is no significant difference on dc current gain, common-emitter IV characteristics and fT-performance due to the identical emitter layout. However, HBT with 1.2 μm base width demonstrated lowest fMAX. This is due to the limits on base current flowing in the 1.2 μm base width, where fMAX is dominated by RB instead of CBC.
Keywords :
capacitance; electric resistance; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 1.2 to 2.0 micron; AC characteristics; DC characteristics; HBTs; InGaP-GaAs; base resistance; base width; base-collector junction capacitance; common-emitter I-V characteristics; current gain; Capacitance; Contact resistance; Current measurement; Etching; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Performance gain; Power amplifiers; Roentgenium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517452
Filename :
1517452
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172630
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