DocumentCode :
2172651
Title :
Kink effect in InAlAs/InGaAs short-channel HEMTs: influence on the dynamic and noise performance
Author :
Vasallo, B.G. ; Mateos, J. ; Pardo, D. ; González, T.
Author_Institution :
Dept. de Fisica Aplicada, Salamanca Univ., Spain
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
188
Lastpage :
191
Abstract :
The degradation introduced by the kink effect in the dynamic and noise performance of an InAlAs/InGaAs 100 nm gate high electron mobility transistor is analyzed by using Monte Carlo simulations.
Keywords :
aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor device noise; InAlAs-InGaAs; InAlAs-InGaAs short-channel HEMT degradation; Monte Carlo simulations; dynamic performance; high electron mobility transistor; kink effect; noise performance; Analytical models; Circuit simulation; Degradation; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; MODFETs; Spontaneous emission; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517453
Filename :
1517453
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172651
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