DocumentCode
2172728
Title
Micro-photoreflectance spectroscopy investigation of InGaAlAs/GaAsSb/InP heterojunction bipolar transistors
Author
Chouaib, H. ; Bakouboula, A. ; Benyattou, T. ; Bru-Chevallier, C. ; Lahreche, H. ; Bove, P.
Author_Institution
Lab. de Phys. de la Matiere, UMR, Villeurbanne, France
fYear
2005
fDate
8-12 May 2005
Firstpage
200
Lastpage
203
Abstract
We characterize InGaAlAs/GaAsSb/InP heterojunction bipolar transistor structures using microphotoreflectance spectroscopy (micro-PR). The experiments show the feasibility of micro-PR measurement on a 1μm diameter spot opening the way to device optical characterization under operation.
Keywords
III-V semiconductors; heterojunction bipolar transistors; indium compounds; photoreflectance; InGaAlAs-GaAsSb-InP; device optical characterization; heterojunction bipolar transistors; microphotoreflectance spectroscopy; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laser beams; Laser excitation; Optical attenuators; Optical devices; Probes; Spectroscopy; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517456
Filename
1517456
Link To Document