• DocumentCode
    2172762
  • Title

    Vertical scaling of gate-to-channel distance for a 70 nm InP pseudomorphic HEMT technology

  • Author

    Borg, Malin ; Grahn, Jan ; Wang, Shumin ; Mellberg, Anders ; Zirath, Herbert

  • Author_Institution
    Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    204
  • Lastpage
    207
  • Abstract
    DC and HF performance for a 70 nm InP PHEMT technology have been studied as a function of gate-to-channel distance. The optimized PHEMT exhibited a maximum transconductance of 1.5 S/mm and fmax of 400 GHz.
  • Keywords
    III-V semiconductors; electric admittance; high electron mobility transistors; indium compounds; 1.5 S/mm; 400 GHz; 70 nm InP pseudomorphic HEMT technology; DC performance; HF performance; InP; gate-to-channel distance; transconductance; vertical scaling; Gold; HEMTs; Indium gallium arsenide; Indium phosphide; Microwave technology; Molecular beam epitaxial growth; PHEMTs; Schottky barriers; Thickness control; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517457
  • Filename
    1517457
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2172762