DocumentCode
2172815
Title
InP substrate evaluation for epi-ready MBE growth
Author
Liu, W.K. ; Fastenau, J.M. ; Lubyshev, D. ; Fang, X.-M. ; Doss, C. ; Wu, Y.
Author_Institution
IQE Inc., Bethlehem, PA, USA
fYear
2005
fDate
8-12 May 2005
Firstpage
212
Lastpage
215
Abstract
This paper compares 3" and 4" SI InP substrates from multiple vendors in terms of their epi-ready quality for MBE growth, with a focus on surface morphology and on epilayer-substrate interface charge and buffer leakage.
Keywords
III-V semiconductors; buffer layers; epitaxial layers; indium compounds; molecular beam epitaxial growth; substrates; surface cleaning; surface morphology; 3 in; 4 in; InP; InP substrate; buffer leakage; epi-ready MBE growth; epilayer-substrate interface charge; surface cleaning; surface morphology; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MODFETs; Manufacturing; Molecular beam epitaxial growth; Optical buffering; Optical devices; Substrates; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517459
Filename
1517459
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