• DocumentCode
    2172861
  • Title

    Crystalline quality improvement of In0.52Al0.48As/In0.53Ga0.47As heterostructure on InAlAs/InGaAlAs/GaAs metamorphic buffer by post-growth rapid thermal annealing

  • Author

    Ihn, Soo-Ghang ; Jo, Seong-June ; Oh, Kyoung-Hwan ; Kim, Tae-Woo ; Song, Jong-In

  • Author_Institution
    Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., South Korea
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    216
  • Lastpage
    218
  • Abstract
    Effects of post-growth rapid thermal annealing (RTA) on optical and structural properties of an In0.52Al0.48As/In0.53Ga0.47As multi-quantum-well (MQW) structure on a GaAs substrate by using an InAlAs/InGaAlAs metamorphic buffer were investigated. Photoluminescence spectrum and triple-axis (004) contour maps showed improvement in crystalline quality of the metamorphic MQW structure through the post-growth RTA.
  • Keywords
    III-V semiconductors; aluminium compounds; buffer layers; gallium arsenide; indium compounds; optical properties; photoluminescence; rapid thermal annealing; semiconductor heterojunctions; semiconductor quantum wells; GaAs substrate; In0.52Al0.48As-In0.53Ga0.47As; InAlAs-InGaAlAs-GaAs; crystalline quality; metamorphic buffer; metamorphic multiquantum-well structure; optical properties; photoluminescence spectrum; post-growth rapid thermal annealing effects; semiconductor heterostructure; structural properties; Crystallization; Gallium arsenide; High speed optical techniques; Indium compounds; Indium phosphide; Optical buffering; Plasma temperature; Quantum well devices; Rapid thermal annealing; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517460
  • Filename
    1517460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2172861