DocumentCode
2172895
Title
MOCVD process modeling using in-situ reflectance test structure measurements for process control improvement
Author
Ebert, C. ; Bond, A. ; Levkoff, J. ; Seiler, J. ; Wanamaker, C.
Author_Institution
T-Networks Inc., Allentown, PA, USA
fYear
2005
fDate
8-12 May 2005
Firstpage
219
Lastpage
222
Abstract
Process control methodology based on in-situ reflectance measurements can be used with a process model to reduce calibration runs in the development and manufacture of InGaAlAs lasers and modulators.
Keywords
III-V semiconductors; MOCVD; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; reflectivity; semiconductor device models; semiconductor lasers; semiconductor process modelling; InGaAlAs; MOCVD process modeling; in-situ optical reflectance test structure; process control methodology; semiconductor laser manufacture; semiconductor modulator manufacture; Composite materials; Gallium arsenide; Indium phosphide; Inductors; MOCVD; Optical feedback; Optical materials; Process control; Reflectivity; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517461
Filename
1517461
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