Title :
MOCVD process modeling using in-situ reflectance test structure measurements for process control improvement
Author :
Ebert, C. ; Bond, A. ; Levkoff, J. ; Seiler, J. ; Wanamaker, C.
Author_Institution :
T-Networks Inc., Allentown, PA, USA
Abstract :
Process control methodology based on in-situ reflectance measurements can be used with a process model to reduce calibration runs in the development and manufacture of InGaAlAs lasers and modulators.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; electro-optical modulation; gallium arsenide; indium compounds; reflectivity; semiconductor device models; semiconductor lasers; semiconductor process modelling; InGaAlAs; MOCVD process modeling; in-situ optical reflectance test structure; process control methodology; semiconductor laser manufacture; semiconductor modulator manufacture; Composite materials; Gallium arsenide; Indium phosphide; Inductors; MOCVD; Optical feedback; Optical materials; Process control; Reflectivity; Testing;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517461
