• DocumentCode
    2172905
  • Title

    Effect of H2 annealing on silicon quality and 1/f noise in SOS

  • Author

    Morishita, T. ; Moriyasu, Y. ; Kawakami, Y. ; Matsui, M. ; Kobayashi, T. ; Kimura, M. ; Reedy, R.

  • Author_Institution
    Central Lab., Asahi Chem. Ind. Co. Ltd., Sizuoka, Japan
  • fYear
    1997
  • fDate
    6-9 Oct 1997
  • Firstpage
    150
  • Lastpage
    151
  • Abstract
    In this work, we have investigated silicon surface defect of SOS that had been subjected to H2 annealing at temperature ranging from 900°C to 1150°C by means of SEM. We have also investigated the effects of the surface defect density on l/f noise of n-MOSFET
  • Keywords
    1/f noise; MOSFET; annealing; sapphire; scanning electron microscopy; semiconductor device noise; silicon-on-insulator; H2; H2 annealing; SEM; SOS; Si-Al2O3; l/f noise; n-MOSFET; silicon quality; surface defect density; Annealing; Density measurement; MOSFET circuits; Noise figure; Noise measurement; Semiconductor films; Silicon; Surface morphology; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1997. Proceedings., 1997 IEEE International
  • Conference_Location
    Fish Camp, CA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-3938-X
  • Type

    conf

  • DOI
    10.1109/SOI.1997.634977
  • Filename
    634977
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2172905