DocumentCode :
2172905
Title :
Effect of H2 annealing on silicon quality and 1/f noise in SOS
Author :
Morishita, T. ; Moriyasu, Y. ; Kawakami, Y. ; Matsui, M. ; Kobayashi, T. ; Kimura, M. ; Reedy, R.
Author_Institution :
Central Lab., Asahi Chem. Ind. Co. Ltd., Sizuoka, Japan
fYear :
1997
fDate :
6-9 Oct 1997
Firstpage :
150
Lastpage :
151
Abstract :
In this work, we have investigated silicon surface defect of SOS that had been subjected to H2 annealing at temperature ranging from 900°C to 1150°C by means of SEM. We have also investigated the effects of the surface defect density on l/f noise of n-MOSFET
Keywords :
1/f noise; MOSFET; annealing; sapphire; scanning electron microscopy; semiconductor device noise; silicon-on-insulator; H2; H2 annealing; SEM; SOS; Si-Al2O3; l/f noise; n-MOSFET; silicon quality; surface defect density; Annealing; Density measurement; MOSFET circuits; Noise figure; Noise measurement; Semiconductor films; Silicon; Surface morphology; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
ISSN :
1078-621X
Print_ISBN :
0-7803-3938-X
Type :
conf
DOI :
10.1109/SOI.1997.634977
Filename :
634977
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172905
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