• DocumentCode
    2172952
  • Title

    Damping of Rabi Oscillations in InAs Quantum Dots due to Acoustic Phonons

  • Author

    Moldaschl, T. ; Müller, T. ; Golka, S. ; Strasser, G. ; Unterrainer, K.

  • Author_Institution
    Vienna Univ. of Technol., Vienna
  • fYear
    2007
  • fDate
    17-22 June 2007
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Semiconductor quantum dots (QDs) are regarded as potential candidates for the implementation of solid state quantum computation. The basic ingredient for the realization of a quantum computer are Rabi oscillations - a sinusoidal time evolution of the population difference in a two-level system that is observed under strong resonant optical excitation (Stievater et al., 2001). In this contribution we report measurements of the damping of Rabi oscillations in InAs self-assembled QDs in the temperature range between T = 5 and 90 K. From comparison of the time domain Rabi oscillations with spectral hole burning (SHB) lineshapes we conclude that acoustic phonon-induced dephasing processes damp the Rabi oscillations.
  • Keywords
    III-V semiconductors; damping; indium compounds; semiconductor quantum dots; surface phonons; InAs; Rabi oscillations damping; acoustic phonons; dephasing processes; optical excitation; quantum computer; semiconductor quantum dots; solid state quantum computation; spectral hole burning lineshapes; temperature 7 K to 90 K; time domain Rabi oscillations; Acoustic measurements; Damping; Optical computing; Phonons; Quantum computing; Quantum dots; Resonance; Solid state circuits; Temperature distribution; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4244-0931-0
  • Electronic_ISBN
    978-1-4244-0931-0
  • Type

    conf

  • DOI
    10.1109/CLEOE-IQEC.2007.4386856
  • Filename
    4386856