DocumentCode
2172952
Title
Damping of Rabi Oscillations in InAs Quantum Dots due to Acoustic Phonons
Author
Moldaschl, T. ; Müller, T. ; Golka, S. ; Strasser, G. ; Unterrainer, K.
Author_Institution
Vienna Univ. of Technol., Vienna
fYear
2007
fDate
17-22 June 2007
Firstpage
1
Lastpage
1
Abstract
Semiconductor quantum dots (QDs) are regarded as potential candidates for the implementation of solid state quantum computation. The basic ingredient for the realization of a quantum computer are Rabi oscillations - a sinusoidal time evolution of the population difference in a two-level system that is observed under strong resonant optical excitation (Stievater et al., 2001). In this contribution we report measurements of the damping of Rabi oscillations in InAs self-assembled QDs in the temperature range between T = 5 and 90 K. From comparison of the time domain Rabi oscillations with spectral hole burning (SHB) lineshapes we conclude that acoustic phonon-induced dephasing processes damp the Rabi oscillations.
Keywords
III-V semiconductors; damping; indium compounds; semiconductor quantum dots; surface phonons; InAs; Rabi oscillations damping; acoustic phonons; dephasing processes; optical excitation; quantum computer; semiconductor quantum dots; solid state quantum computation; spectral hole burning lineshapes; temperature 7 K to 90 K; time domain Rabi oscillations; Acoustic measurements; Damping; Optical computing; Phonons; Quantum computing; Quantum dots; Resonance; Solid state circuits; Temperature distribution; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-0931-0
Electronic_ISBN
978-1-4244-0931-0
Type
conf
DOI
10.1109/CLEOE-IQEC.2007.4386856
Filename
4386856
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