Title :
Epitaxial wafer quality versus substrate quality
Author :
Suzuki, Kenji ; Noda, Akira ; Nakamura, Masashi ; Kawabe, Manabu ; Akamatsu, Kazuhiro ; Kurita, Hideki ; Hirano, Ryuichi
Author_Institution :
Compound Semicond. Mater. Dept., Nikko Mater. Co. Ltd., Ibaraki, Japan
Abstract :
The effect of various InP substrates properties on epitaxial layer quality was investigated. From the results of experiments on MOCVD, we found that the average haze of epitaxial layer surfaces measured by surfscan can be reduced by using substrates with optimum surface mis-orientation angles of 0.05-0.10 degrees. Our experiments on MBE also showed a similar tendency. Furthermore it was found that appropriate treatment of substrates prevents slips on the periphery of epitaxial wafers.
Keywords :
III-V semiconductors; MOCVD; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; slip; substrates; surface roughness; InP; InP substrates properties; MOCVD; epitaxial layer surfaces; epitaxial wafer quality; haze reduction; molecular beam epitaxial growth; slip prevention; substrate quality; surface misorientation angles; surface roughness; surfscan; Epitaxial growth; Epitaxial layers; Indium phosphide; MOCVD; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface morphology; Surface roughness; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517464
