DocumentCode :
2173168
Title :
Ohmic contacts of Pd/Zn/Pt(or Pd)/Au materials to p-type InP
Author :
Hwang, Sungmin ; Shim, Jongin ; Eo, Yungseon
Author_Institution :
Dept. of Electr. & Comput. Eng., Hanyang Univ., Ansan, South Korea
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
260
Lastpage :
262
Abstract :
We investigated the contact resistivities of Au//M(=Pd or Pt)/Zn/Pd/p-InP, focusing on the role of the third metal, M. Both the lowest specific contact resistivity of 7×10-6 Ω·cm2 and a flat diffusion front were obtained for a sample with a Au/Pt/Zn/Pd/p-InP contact material after annealing at 400°C for 4 min.
Keywords :
III-V semiconductors; annealing; contact resistance; gold; indium compounds; ohmic contacts; palladium; platinum; zinc; 4 min; 400 C; Au-Pt-Zn-Pd-InP; Au-Pt-Zn-Pd-p-InP contact material; annealing; flat diffusion front; ohmic contacts; specific contact resistivities; Annealing; Conductivity; Costs; Gold; Indium phosphide; Ohmic contacts; Substrates; Surface morphology; Temperature; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517473
Filename :
1517473
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2173168
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