DocumentCode
2173191
Title
A Ku-band InP-based RTD MMIC VCO with very low DC power consumption
Author
Choi, Sunkyu ; Jeong, Yongsik ; Yang, Kyounghoon
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fYear
2005
fDate
8-12 May 2005
Firstpage
263
Lastpage
266
Abstract
A Ku-band RTD-based VCO has been demonstrated using an InP-based RTD/HBT MMIC technology for the first time. The VCO showed the extremely low DC power consumption of 0.71 mW with good phase noise characteristics.
Keywords
III-V semiconductors; MMIC; heterojunction bipolar transistors; indium compounds; phase noise; resonant tunnelling diodes; voltage-controlled oscillators; DC power consumption; InP; InP-based RTD-HBT MMIC technology; Ku-band RTD-based VCO; phase noise characteristics; Capacitance; Circuits; Energy consumption; Frequency; Heterojunction bipolar transistors; MMICs; Phase noise; Tuning; Voltage; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517474
Filename
1517474
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