• DocumentCode
    2173235
  • Title

    Fabrication of nanowires on InP(100) by Ar+ irradiation

  • Author

    Zhao, G. ; Hill, G. ; Daud, S.M. ; Snowdon, K.J.

  • Author_Institution
    INEX, Newcastle upon Tyne Univ., UK
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    269
  • Lastpage
    272
  • Abstract
    Arrays of nanowires of 32 nm high, with a periodicity of 134 nm were produced over an area of several square micrometers with 2 keV Ar+ ion bombardment at 72° incidence angle to surface normal to a dose of 2×1017 cm-2. The formation of ripples and nanowires is believed to arise from mergence of tailed cones agglomerated from In ions due to the preferential sputtering of P from InP.
  • Keywords
    III-V semiconductors; indium compounds; ion beam effects; nanotechnology; nanowires; sputtering; 32 nm; Ar+ irradiation; In ions; InP; InP(100); ion bombardment; nanowires fabrication; preferential sputtering; ripples; tailed cones; Argon; Fabrication; Indium phosphide; Ion beams; Nanowires; Rough surfaces; Surface morphology; Surface roughness; Surface topography; Surface waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517476
  • Filename
    1517476
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2173235