DocumentCode :
2173297
Title :
Room temperature CW operation of InAs/InP (100) quantum dots based buried ridge stripe lasers
Author :
Lelarge, F. ; Rousseau, B. ; Poingt, F. ; Pommereau, F. ; Accard, A.
Author_Institution :
Alcatel-Thales III-V Lab, Marcoussis, France
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
276
Lastpage :
278
Abstract :
Fabrication of InAs QDs grown on (100) InP substrate by GSMBE is reported. We investigate the room temperature operation of QDs-based broad area and buried ridge stripe lasers emitting at 1.5 μm (JTh, T0, αH).
Keywords :
III-V semiconductors; chemical beam epitaxial growth; indium compounds; quantum dot lasers; semiconductor quantum dots; 1.5 micron; 293 to 298 K; GSMBE; InAs quantum dots; InAs-InP; InP; InP(100) substrate; buried ridge stripe lasers; room temperature CW operation; Epitaxial growth; Gas lasers; Indium phosphide; Laser theory; Optical device fabrication; Quantum dot lasers; Quantum well lasers; Substrates; Temperature; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517478
Filename :
1517478
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2173297
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