Title :
Formation of self-assembled InAs/GaAs quantum dots with an ultranarrow photoluminescence linewidth of ∼11 meV by rapid thermal annealing
Author :
Yang, Tao ; Tatebayashi, Jun ; Aoki, Kanna ; Nishioka, Masao ; Arakawa, Yasuhiko
Author_Institution :
Nanoelectron. Collaborative Res. Center, Tokyo Univ., Japan
Abstract :
We report the effects of rapid thermal annealing on emission properties of highly uniform self-assembled InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition and demonstrate an ultranarrow linewidth of ∼11 meV by the annealing.
Keywords :
III-V semiconductors; MOCVD coatings; gallium arsenide; indium compounds; photoluminescence; rapid thermal annealing; self-assembly; semiconductor quantum dots; InAs-GaAs; emission properties; metalorganic chemical vapor deposition; rapid thermal annealing; self-assembled InAs-GaAs quantum dots; ultranarrow photoluminescence linewidth; Atomic layer deposition; Chemical vapor deposition; Gallium arsenide; MOCVD; Multilevel systems; Quantum dots; Rapid thermal annealing; Self-assembly; Temperature; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517479
