Title :
Cl2/O2- and Cl2/N2-based inductively coupled plasma etching of photonic crystals in InP: sidewall passivation
Author :
van der Heijden, R. ; Carlstrom, C.F. ; van der Drift, E. ; van der Heijden, R.W. ; Notzel, R. ; van Veldhoven, R. ; Karouta, F. ; Salemink, H.W.M. ; Talneau, A.
Author_Institution :
COBRA Inter-Univ. Res. Inst., Eindhoven Univ. of Technol., Netherlands
Abstract :
We have fabricated two-dimensional photonic crystals in InP-based materials with Cl2-based inductively coupled plasma etching. To obtain vertical sidewalls, we employ sidewall passivation through addition of N2 or O2 to the plasma. With the Cl2O2-process we are able to etch 3.2 μm deep holes that have nearly cylindrical shape in the upper 2 μm. The first optical results illustrate the feasibility of our approach, showing over 30 dB transmission reduction in the ΓK-stopband.
Keywords :
III-V semiconductors; indium compounds; passivation; photonic crystals; sputter etching; ΓK-stopband; 3.2 micron; Cl2/N2-based inductively coupled plasma etching; Cl2/O2-based inductively coupled plasma etching; InP; InP-based materials; inductively coupled plasma etching; sidewall passivation; transmission reduction; two-dimensional photonic crystal fabrication; vertical sidewalls; Crystalline materials; Etching; Indium phosphide; Passivation; Photonic crystals; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma measurements; Plasma temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517489
