DocumentCode :
2173590
Title :
A third-order 1 MHz continuous-time sigma-delta modulator in a 130 nm CMOS process
Author :
de Aguirre, Paulo Cesar C. ; Klimach, Hamilton D. ; Susin, Altamiro A.
Author_Institution :
Computer Architecture and Microelectronics Group, Federal University of Pampa (UNIPAMPA), Alegrete, Brazil
fYear :
2015
fDate :
24-27 Feb. 2015
Firstpage :
1
Lastpage :
4
Abstract :
This paper describes the design and implementation of a low-pass third-order single-loop single-bit continuous-time sigma-delta modulator (CT-SDM) in a 130 nm CMOS process. To reduce clock jitter effects and operational amplifiers requirements a non-return-to-zero (NRZ) digital-to-analog converter (DAC) pulse shape was employed. Post-layout simulation results indicate that the modulator achieves 56 dB of dynamic range, 57.31 dB of peak SNDR or 9.23 bits of effective resolution over a 1 MHz signal bandwidth with an oversampling ratio (OSR) of 64. The CT-SDM draws 5.91 mW from a 1.2 V power supply providing a figure-of-merit (FOM) of 4.93 pJ/conv. The CT-SDM core area is 0.31 mm2 and the chip was manufactured and will be soon characterized.
Keywords :
Bandwidth; Clocks; Frequency modulation; Jitter; Resistors; Sigma-delta modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits & Systems (LASCAS), 2015 IEEE 6th Latin American Symposium on
Conference_Location :
Montevideo, Uruguay
Type :
conf
DOI :
10.1109/LASCAS.2015.7250457
Filename :
7250457
Link To Document :
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