Title :
Low temperature thermoelectric properties of Ni doped n-type filled skutterudites Ba0.3Co4Sb12
Author :
Chen, W. ; Dyck, J.S. ; Uher, C. ; Chen, L.D. ; Tang, X.F. ; Hirai, T.
Author_Institution :
Dept. of Phys., Michigan Univ., Ann Arbor, MI, USA
Abstract :
n-type Ba filled skutterudites doped with Ni, Ba0.3Ni xCo4-xSb12 with 0⩽x⩽0.2, have been synthesized and the Seebeck coefficient, thermal conductivity, electrical resistivity and Hall coefficient have been measured. ZT of 1.2 has been achieved at 800 K with x=0.05. The thermal conductivity data are fitted and the rattling effect of the Ba atoms is identified through a resonance scattering term. The Hall mobility is studied and a mixed scattering mechanism of acoustic phonons and ionized impurities based on a single, rigid band picture is presented. The role of Ni atoms in enhancing the thermoelectric performance is discussed
Keywords :
Hall mobility; Seebeck effect; barium compounds; cobalt compounds; electrical resistivity; electron-phonon interactions; impurity scattering; nickel compounds; semiconductor materials; thermal conductivity; 800 K; Ba0.3Co4Sb12; Ba0.3Co4Sb12:Ni; Ba0.3NixCo4-xSb12; Hall coefficient; Hall mobility; Ni doped n-type filled skutterudites; Seebeck coefficient; acoustic phonons; electrical resistivity; ionized impurities; low temperature thermoelectric properties; mixed scattering mechanism; rattling effect; resonance scattering term; single rigid band picture; strong point defect scattering; thermal conductivity; Acoustic measurements; Acoustic scattering; Atomic measurements; Conductivity measurement; Electric resistance; Electric variables measurement; Temperature; Thermal conductivity; Thermal resistance; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-7205-0
DOI :
10.1109/ICT.2001.979824
