DocumentCode
2173606
Title
Low LO Power V-band CPW Mixer Using GaAs PHEMT
Author
An, Dan ; Lee, Bok Hyung ; Chae, Yeon Sik ; Park, Hyung Moo ; Park, Hyun Chang ; Rhee, Jin Koo
Author_Institution
Millimeter-wave INnovation Technology research center (MINT), Dongguk University, Pil-dong, Joong-gu, Seoul, 100-715, Korea. Tel: +82-2-2260-3335, Fax: +82-2-2277-4796
fYear
2002
fDate
23-26 Sept. 2002
Firstpage
1
Lastpage
4
Abstract
We have designed and fabricated a low LO power V-band CPW mixer using GaAs PHEMT technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, and good LO-RF isolation characteristics. The V-band mixer was fabricated using the MIMIC process including 0.1-? GaAs PHEMTs and CPW transmission lines. The V-band mixer exhibited a high conversion gain of 2 dB at a low LO power of 0 dBm. The low LO power and the high conversion gain achieved in this work is among the best ever reported for a V-band mixer.
Keywords
Coplanar waveguides; Gain; Gallium arsenide; Isolation technology; MIMICs; Millimeter wave communication; Millimeter wave technology; PHEMTs; Power transmission lines; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2002. 32nd European
Conference_Location
Milan, Italy
Type
conf
DOI
10.1109/EUMA.2002.339399
Filename
4140479
Link To Document