Title :
Transport of Ce-Co-Sb skutterudites
Author :
Min, Xinmin ; Chen, Shenli ; Jiming An ; Kefeng Cai ; Nan, Ce Wen
Author_Institution :
Adv. Mater. Res. Inst., Wuhan Univ. of Technol., China
Abstract :
The correlation among composition, structure, chemical bond and transport of unfilled skutterudite CoSb3 and filled skutterudite CeCo5Fe3Sb12 has been studied using the density function and discrete variation (DFT-DVM) method. Three models for filled skutterudite study were proposed and calculated to describe the "rattling" pattern. Model 1 is with Ce in the center, model 2 is with Ce away from the center and near to Sb, and model 3 is also with Ce away from the center but near to Fe. Due to the different changes between ionic and covalent bonds, there is less difference in stability among the models 1, 2 and 3. Therefore, these different models can exist at the same time, or can translate from one to another more easily. In other words, the "rattling" pattern has taken place. The covalent bond of Co-Sb or Fe-Sb in filled models is weaker than that of Co-Sb in unfilled models, as an electrical cloud of Sb takes part in the covalent bond of Ce-Sb in the filled models. The result is consistent with the experimental result that the thermal conductivity of CeCo5Fe3Sb12 is lower than that of CoSb3, and the thermoelectric property of CeCo 5Fe3Sb12 is better than that of CoSb 3
Keywords :
bonds (chemical); cerium compounds; cobalt compounds; crystal structure; density functional theory; iron compounds; thermal conductivity; thermoelectricity; CeCo5Fe3Sb12; CoSb3; DFT-DVM method; chemical bond; composition; covalent bond; electrical cloud; filled skutterudite; ionic bond; thermal conductivity; thermoelectric property; unfilled skutterudite; Bonding; Chemical technology; Conducting materials; Crystalline materials; Density functional theory; Electrons; Inorganic materials; Materials science and technology; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-7205-0
DOI :
10.1109/ICT.2001.979827