DocumentCode :
2173695
Title :
Preparation and annealing effects of large sized ingot of n-type CoSb3
Author :
Hara, R. ; Tomita, K. ; Inoue, S. ; Kaibe, H.T. ; Mizukami, H.
Author_Institution :
Res. Div., Komatsu Ltd., Kanagawa, Japan
fYear :
2001
fDate :
2001
Firstpage :
84
Lastpage :
88
Abstract :
We prepared large sized ingot of CoSb3 using spark plasma sintering in order to assemble the actual modules. The annealing effects on the thermoelectrical properties were also investigated. The apparent density ratio of obtained ingot with size of φ50×10 mm was larger than 98%. The electrical resistivity ρ and Seebeck coefficient a were measured as functions of temperature over the range from room temperature to 800 K. The values of α and ρ were 90% to those of the smaller sized ingot with φ20×5 mm. They suggest that the obtained large ingot has enough performance for application. It was found that the surface of the specimen was covered with a thin film with double layered structure after heating above 923 K in ambient air. This was identified as an antimony oxide-based material. It can be estimated that the thickness of the inner layer will be approximately 370 μm after annealing at 873 K for ten years in air atmosphere
Keywords :
Seebeck effect; annealing; cobalt compounds; electrical resistivity; plasma materials processing; semiconductor materials; sintering; 293 to 800 K; CoSb3; Seebeck coefficient; annealing; double layered structure; electrical resistivity; ingot; n-type CoSb3; spark plasma sintering; thermoelectric properties; thin film; Annealing; Assembly; Electric resistance; Plasma density; Plasma measurements; Plasma properties; Plasma temperature; Sparks; Temperature distribution; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
ISSN :
1094-2734
Print_ISBN :
0-7803-7205-0
Type :
conf
DOI :
10.1109/ICT.2001.979828
Filename :
979828
Link To Document :
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