• DocumentCode
    2173722
  • Title

    Modeling the impact of heavy ion on FDSOI NanoCMOS

  • Author

    Bartra, Walter Calienes ; Reis, Ricardo ; Vladimirescu, Andrei

  • Author_Institution
    Universidade Federal do Rio Grande do Sul, Instituto de Informática - PGMICRO / PPGC, Porto Alegre, RS - Brazil
  • fYear
    2015
  • fDate
    24-27 Feb. 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper shows a study about the heavy ion impacts effects on 28nm Fully Depleted Silicon On Isolator transistors (FDSOI). The use of an Hydrodynamic Charge Transport Model and a 3D TCAD simulation is detailed, with emphasis in Electron Density on FDSOI and total source current. The sensibility of drain region against this issues is shown. The simulation results shows an initial approach for future mixed-mode simulations in digital circuits at device level.
  • Keywords
    Hydrodynamics; Integrated circuit modeling; Logic gates; Mathematical model; Substrates; Transient analysis; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits & Systems (LASCAS), 2015 IEEE 6th Latin American Symposium on
  • Conference_Location
    Montevideo, Uruguay
  • Type

    conf

  • DOI
    10.1109/LASCAS.2015.7250460
  • Filename
    7250460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2173722