Title :
Vertical scaling of planarized InP/InGaAs heterojunction bipolar transistors with fT>350 GHz and fmax>500 GHz
Author :
Sawdai, D. ; Chang, P.C. ; Gambin, V. ; Zeng, X. ; Wang, J. ; Barsky, M. ; Chan, B. ; Oyama, B. ; Gutierrez-Aitken, A. ; Oki, A.
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA, USA
Abstract :
A dielectric planarization process was developed which enabled aggressive scaling of both emitter area and base-collector capacitance. Transistors were fabricated with emitters as small as 0.14 μm, with the fastest HBTs using 0.4-μm emitters.
Keywords :
III-V semiconductors; dielectric polarisation; gallium arsenide; heterojunction bipolar transistors; indium compounds; 0.14 micron; 0.4 micron; 350 GHz; 500 GHz; HBT fabrication; InP-InGaAs; InP-InGaAs heterojunction bipolar transistors; base-collector capacitance; dielectric planarization process; emitter area; vertical scaling; Capacitance; Dielectrics; Etching; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Ohmic contacts; Planarization; Silicon; Space technology;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517495
