Title :
Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors
Author :
Li, Cheng ; Yang, Qinqing ; Ou, Haiyan ; Wang, Qiming
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO 2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 μm wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted
Keywords :
Ge-Si alloys; elemental semiconductors; optical resonators; photodetectors; quantum well devices; reflectivity; semiconductor materials; silicon; 1.3 micron; Si-SiO2; Si/SiO2 Bragg reflector; SiGe-Si; SiGe/Si multiple quantum well resonant cavity enhanced photodetector; electron beam evaporation; fabrication; quantum efficiency; reflectance spectra; reflectivity; silicon-on-reflector substrate; smart-cut technique; sol-gel technique; transfer matrix model; Costs; Epitaxial growth; Fabrication; Germanium silicon alloys; Hydrogen; Photodetectors; Reflectivity; Resonance; Silicon germanium; Substrates;
Conference_Titel :
Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-5908-9
DOI :
10.1109/ECTC.2000.853409
