• DocumentCode
    2173767
  • Title

    Synthesis and high temperature thermoelectric properties of n-type BayNixCo4-xSb12

  • Author

    Tang, X.E. ; Chen, L.D. ; Goto, T. ; Dyck, J.S. ; Chen, W. ; Uher, C. ; Hirai, T. ; Yuan, R.Z.

  • Author_Institution
    State Key Lab. of Adv. Technol. for Mater. Synthesis & Process., Wuhan Univ. of Technol., China
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    97
  • Lastpage
    100
  • Abstract
    Single-phase filled skutterudite compounds BayNx Co4-xSb12 (x=0-0.1, y=0-0.4) were synthesized by a two-step solid state reaction. Effects of Ba filling fraction and Ni content on the thermoelectric properties of n-type Ba yNixCo4-xSb12 were investigated. Thermal conductivity decreased with increasing Ba filling fraction and temperature. When barium filling fraction (y) was fixed at 0.3, the thermal conductivity decreased with increasing Ni content, and reached a minimum value at about x=0.05. Electron concentration and electrical conductivity increased with increasing Ba filling fraction and Ni content. Seebeck coefficient increased with increasing temperature, and decreased with increasing Ba filling fraction and Ni content. A maximum ZT value of 1.2 was obtained at about 800 K for Ba 0.3Ni0.05Co3.95Sb12
  • Keywords
    Seebeck effect; barium compounds; cobalt compounds; electrical conductivity; electron density; materials preparation; nickel compounds; semiconductor materials; thermal conductivity; 800 K; Ba filling fraction; Ba0.3Ni0.05Co3.95Sb12; Ni content; Seebeck coefficient; electrical conductivity; electron concentration; filled skutterudite compounds; n-type samples; thermal conductivity; thermoelectric properties; two-step solid state reaction; Atmospheric measurements; Barium; Conducting materials; Filling; Lattices; Plasma measurements; Plasma temperature; Powders; Thermal conductivity; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
  • Conference_Location
    Beijing
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-7205-0
  • Type

    conf

  • DOI
    10.1109/ICT.2001.979831
  • Filename
    979831