Measurement and simulation of self-heating in SOI CMOS analogue circuits

Author

Tenbroek, B.M. ; Lee, M.S.L. ; Redman-White, W. ; Edwards, C.F. ; Bunyan, R.J.T. ; Uren, M.J.

Author_Institution

Dept. of Electron. & Comput. Sci., Southampton Univ., UK

fYear

1997

fDate

6-9 Oct 1997

Firstpage

156

Lastpage

157

Abstract

Summary form only given. The influence of dynamic self-heating on SOI MOSFET device behaviour is becoming well known. Although digital circuits typically operate sufficiently fast that self-heating does not affect behaviour, its effects must still be considered during parameter extraction. However, that the operation of analogue circuits will be influenced by self-heating is much more likely. Consequently, SPICE models should include self-heating, with accurately characterised thermal resistances and time constants. This paper explores the effect of self-heating on some common analogue circuits in a 0.7 μm PD SOI technology, both from measurements and from SPICE simulations using a new SOI MOSFET model (STAG v2.0)

Keywords

CMOS analogue integrated circuits; circuit analysis computing; integrated circuit measurement; integrated circuit modelling; silicon-on-insulator; thermal analysis; thermal resistance; 0.7 micron; SOI CMOS analogue circuits; SOI MOSFET device behaviour; SOI MOSFET model; SPICE models; STAG v2.0; Si; dynamic self-heating; partially-depleted SOI technology; thermal resistances; time constants; CMOS analog integrated circuits; Circuit simulation; Delay; Earth; MOSFET circuits; Predictive models; Ring oscillators; SPICE; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1997. Proceedings., 1997 IEEE International

Conference_Location

Fish Camp, CA

ISSN

1078-621X

Print_ISBN

0-7803-3938-X

Type

conf

DOI

10.1109/SOI.1997.634980

Filename

634980