Topological characteristics of MBE grown Sb-introduced Ga(In)As covered InAs quantum dots on GaAs

Author

Matsuura, Tetsuya ; Miyamoto, Tomoyuki ; Ohta, Masataka ; Koyama, Fumio

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

fYear

2005

fDate

8-12 May 2005

Firstpage

351

Lastpage

354

Abstract

We found the size enlargement of MBE grown InAs quantum dot (QD) on GaAs using a Sb-introduced Ga(In)As cover layer for the first time. The effect of the GaInAsSb cover layer on topological properties of QDs was investigated for various indium (In) and antimony (Sb) compositions in cover layers by atomic force microscopy (AFM). Elongation of the PL wavelength was confirmed as the result of increase of the QD height with reduced lateral size.

Keywords

III-V semiconductors; atomic force microscopy; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor quantum dots; AFM; GaAs; GaInAs covering; GaInAsSb layer; GaInAsSb-InAs; InAs quantum dots; MBE growth; antimony compositions; atomic force microscopy; indium compositions; photoluminescence wavelength; size enlargement; topological properties; Atomic force microscopy; Capacitive sensors; Gallium arsenide; Indium; Quantum dot lasers; Quantum dots; Substrates; Temperature control; US Department of Transportation; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517499

Filename

1517499