DocumentCode
2173866
Title
Wavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region
Author
Kikuno, M. ; Mori, T. ; Seki, H. ; Matsusita, K. ; Kita, T. ; Wada, O.
Author_Institution
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
fYear
2005
fDate
8-12 May 2005
Firstpage
355
Lastpage
358
Abstract
New atomic-layer nitridation process performed just after growth of InAs quantum dots produces red shift in the photoluminescence (PL) by more than 100 nm. Emission at >1.3 μm was achieved at room temperature with no severe efficiency degradation.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical fibre communication; photoluminescence; quantum dot lasers; red shift; semiconductor quantum dots; 1.3 micron; 293 to 298 K; InAs-GaAs; atomic-layer nitridation process; fiber-optic communication region; nitrided InAs-GaAs quantum dots; photoluminescence; red shift; wavelength control; Communication system control; Gallium arsenide; Nitrogen; Optical fiber communication; Quantum dots; Radio frequency; Semiconductor lasers; Substrates; Surface emitting lasers; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517500
Filename
1517500
Link To Document