DocumentCode :
2173900
Title :
Quantum energy levels in mass-transported InAsP quantum wires buried in InGaAsP/InP
Author :
Ohtsuka, Takafumi ; Darja, Jesse ; Nakada, Muneki ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
359
Lastpage :
362
Abstract :
Quantum energy levels and wavefunctions in mass-transported InAsP quantum wires have been calculated. The calculations have been compared with experimental results; good agreement has been obtained on the polarization anisotropy of the optical emission.
Keywords :
III-V semiconductors; indium compounds; interface phenomena; photoluminescence; semiconductor quantum wires; InGaAsP-InP; InGaAsP-InP material; mass-transported InAsP quantum wires; optical emission; photoluminescence; polarization anisotropy; quantum energy levels; wavefunctions; Capacitive sensors; Energy states; Epitaxial growth; Indium phosphide; Lattices; Potential well; Quantum dot lasers; Shape control; Substrates; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517501
Filename :
1517501
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2173900
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