DocumentCode
2173927
Title
Characterisation of GaAs nanowhiskers grown on GaAs and Si substrates
Author
Khorenko, V. ; Regolin, I. ; Neumann, S. ; Do, Q.T. ; Prost, W. ; Tegude, F.J.
Author_Institution
Solid State Electron. Dept., Duisburg-Essen Univ., Duisburg, Germany
fYear
2005
fDate
8-12 May 2005
Firstpage
363
Lastpage
366
Abstract
We report the growth of GaAs nanowhiskers on GaAs and Si substrates using two alternative Ga-precursors and demonstrate results of photoluminescence and electrical characterisation of the grown structures towards the fabrication of III/V nanoscaled optoelectronic devices on Si substrate.
Keywords
III-V semiconductors; gallium arsenide; nanoelectronics; nanostructured materials; photoluminescence; semiconductor growth; Ga-precursor; GaAs; GaAs nanowhiskers growth; GaAs substrate; III-V nanoscaled optoelectronic device fabrication; Si; Si substrate; electrical characterisation; photoluminescence; Epitaxial growth; Gallium arsenide; Gold; Nanoscale devices; Nanostructured materials; Optical device fabrication; Optical materials; Photoluminescence; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517502
Filename
1517502
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