DocumentCode :
2173977
Title :
MBE growth of InN and InGaN for 1 μm wavelength optical device applications
Author :
Nanish, Y. ; Kurouchi, Masahito ; Naoi, Hiroyuki ; Araki, Tsutomu ; Miyajima, Takao
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
368
Lastpage :
373
Keywords :
Diode lasers; Gallium arsenide; Gallium nitride; Laser stability; Optical devices; Optical films; Optical materials; Photonic band gap; Plasma temperature; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517504
Filename :
1517504
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2173977
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