InGaAsN/GaAs quantum well lasers using two-step and nitride passivation growth

Author

Yeh, Nien-Tze ; Chiu, Pei-Chin ; Tsai, Yao-Tsong ; Hong, Chao-Chi ; Hsieh, Tung-Po ; Ho, Wen-Jeng ; Chyi, Jen-Inn

Author_Institution

Telecommun. Labs., Chunghwa Telecom Co. Ltd., Taoyuan, Taiwan

fYear

2005

fDate

8-12 May 2005

Firstpage

374

Lastpage

377

Abstract

The optical properties of InGaAsN QW grown on AlGaAs/GaAs cladding layers have been investigated. Al contamination in the quantum well due to memory effect should be the root cause for the degradation of optical quality. We not only use proposed two-step growth but demonstrate a new method for reducing the Al contamination by growth interruption with DMHy. This approach shows good optical properties as well as two-step growth and more economic compared to the reported ones.

Keywords

III-V semiconductors; aluminium; gallium arsenide; indium compounds; optical fibre communication; passivation; quantum well lasers; semiconductor growth; Al contamination; InGaAsN-GaAs; InGaAsN-GaAs quantum well lasers; cladding layers; memory effect; nitride passivation growth; optical property; optical quality; two-step growth; Conducting materials; Gallium arsenide; High speed optical techniques; MOCVD; Optical materials; Passivation; Quantum well lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517505

Filename

1517505