DocumentCode :
2174021
Title :
Anomalous optical characteristics of InGaAsP on GaAs substrates grown by MOVPE
Author :
Ono, Kenichi ; Takemi, Masayoshi ; Nishimura, Takashi
Author_Institution :
High Frequency Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
378
Lastpage :
380
Abstract :
The mechanism of immiscibility of InGaAsP grown by MOVPE has been investigated. Anomalous optical characteristics which are related to the spinodal decomposition are revealed, and growth condition dependence of this phenomenon has been examined in detail.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; photoluminescence; solubility; spinodal decomposition; vapour phase epitaxial growth; GaAs; InGaAsP-GaAs; MOVPE; anomalous optical characteristics; growth condition dependence; immiscibility; photoluminescence characteristics; spinodal decomposition; Diode lasers; Epitaxial growth; Epitaxial layers; Frequency; Gallium arsenide; Lattices; Optical materials; Substrates; Temperature; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517506
Filename :
1517506
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2174021
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