DocumentCode
2174035
Title
Growth of InAsSb/InAs MQW and InPSb by gas source molecular beam epitaxy
Author
Tsai, Gene ; Lin, Hao-Hsiung
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2005
fDate
8-12 May 2005
Firstpage
381
Lastpage
384
Abstract
We report the growth of InAsSb/InAs MQWs and InPSb by MBE. The incorporation behaviors of Sb as well as the optical properties are discussed. InPSb with only 65 arcsec DXRD linewidths is obtained.
Keywords
III-V semiconductors; X-ray diffraction; chemical beam epitaxial growth; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; InAsSb-InAs; InAsSb-InAs MQW growth; InPSb; double crystal XRD linewidth; gas source molecular beam epitaxy; optical properties; photoluminescence; Buffer layers; Molecular beam epitaxial growth; Monitoring; Optical diffraction; Optical materials; Optical surface waves; Quantum well devices; Substrates; Temperature; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517507
Filename
1517507
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