Title :
Growth of InAsSb/InAs MQW and InPSb by gas source molecular beam epitaxy
Author :
Tsai, Gene ; Lin, Hao-Hsiung
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We report the growth of InAsSb/InAs MQWs and InPSb by MBE. The incorporation behaviors of Sb as well as the optical properties are discussed. InPSb with only 65 arcsec DXRD linewidths is obtained.
Keywords :
III-V semiconductors; X-ray diffraction; chemical beam epitaxial growth; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; InAsSb-InAs; InAsSb-InAs MQW growth; InPSb; double crystal XRD linewidth; gas source molecular beam epitaxy; optical properties; photoluminescence; Buffer layers; Molecular beam epitaxial growth; Monitoring; Optical diffraction; Optical materials; Optical surface waves; Quantum well devices; Substrates; Temperature; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517507
