InGaAs/InAlAs quantum wells on wafer bonded InP/GaAs substrates

Metalorganic vapor phase epitaxial growth of InGaAs/InAlAs quantum well structures on wafer bonded and exfoliated InP films on GaAs substrates were assessed. The composite substrates were fabricated using silicon nitride intermediate layers and through hydrogen-implant induced exfoliation of an InP layer. The InP layer was subjected to a chemical mechanical polish step to produce an epi-ready sub-nm surface roughness prior to the epitaxial growth. Photoluminescence, x-ray rocking curve, and transmission electron microscopy results from the heterostructures grown on the InP/GaAs template wafers were comparable to measurements from structures grown on standard InP substrates, demonstrating that this type of composite substrate can withstand high temperature epitaxial growth processes.