DocumentCode
2174107
Title
Single-Chip 19 and 24-GHz VCO and Frequency Divider Fabricated in a Commercial SiGe Bipolar Technology
Author
Ettinger, K. ; Stelzer, A. ; Höftberger, J. ; Diskus, C.G. ; Fenk, J. ; Weigel, R.
Author_Institution
Institute for Communications and Information Engineering, University of Linz, Austria
fYear
2002
fDate
23-26 Sept. 2002
Firstpage
1
Lastpage
4
Abstract
This paper presents the design, implementation and testing of fully integrated 19 and 24 GHz voltage controlled oscillator chips for RADAR distance sensor applications. The oscillators are integrated on one chip together with a frequency divider with a divide ratio of 16 and 32, as well as an output driver. The chips are fabricated in a production SiGe bipolar technology and have an area of 960 à 960 ¿m2 each. Both VCOs are varactor-tuned LC-type oscillators with a tuning range of about 1 GHz featurng different inductors and transistors. Both chips work from a single 3.6 V supply, the 24 GHz VCO draws 6 mA and the 19 GHz VCO draws 9 mA of supply current, respectively. Divider and output driver consume 23 mA and 51 mA, respectively. The measured phase-noise of the 19 GHz VCO is about ¿100 dBc/Hz at 1 MHz offset frequency, whereas the 24 GHz VCO features a phase-noise of about ¿89 dBc/Hz.
Keywords
Driver circuits; Frequency conversion; Germanium silicon alloys; Inductors; Production; Radar applications; Silicon germanium; Testing; Tuning; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2002. 32nd European
Conference_Location
Milan, Italy
Type
conf
DOI
10.1109/EUMA.2002.339419
Filename
4140499
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