Title :
Growth and characterization of 2" and 4" low EPD InP substrate crystals by the vertical gradient freeze (VGF)-method
Author :
Schwesig, P. ; Sahr, U. ; Friedrich, J. ; Müller, G. ; Köhler, A. ; Kretzer, U. ; Eichler, S. ; Muhe, A.
Author_Institution :
Dept. of Mater. Sci., Erlangen-Nurnberg Univ., Erlangen, Germany
Abstract :
The growth of twin-free 4" semi-insulating InP crystals is reported. The influence of the EPD of the seed crystal and the cone angle of the crucible on dislocation and twin formation were studied.
Keywords :
III-V semiconductors; crystal growth from melt; crystal structure; dislocation etching; indium compounds; semiconductor growth; twinning; InP; cone angle; dislocation formation; low EPD InP substrate crystals; semiinsulating InP substrate crystal growth; twin formation; twin-free crystals; vertical gradient freeze method; Crystalline materials; Crystals; Design optimization; Fluctuations; Gallium arsenide; Indium phosphide; Laboratories; Research and development; Temperature; Thermal stresses;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517510
