Development of 6-inch Fe-doped InP single crystal by vertical boat method

We have succeeded in developing 6-inch Fe doped semi-insulating InP substrates by the VB (Vertical Boat) method. To compare 6-inch substrates and commercially available 4-inch Fe-doped substrates by VB and VCZ (Vapor pressure Controlled Czochralski) methods, we measured dislocation density, X-ray topography, and electrical properties. 6-inch VB-substrates showed equivalent properties to VB substrates and much better properties than 4-inch VCZ substrates. We believe that the VB method is the most promising technology for growing 6-inch InP single crystal as well as 4-inch or smaller InP single crystals.