Title :
High-resistive n- and p-type In0.53Ga0.47As layers produced by cold Fe-ion bombardments
Author :
Subramaniam, S.C. ; Rezazadeh, A.A. ; Too, P. ; Ahmed, S. ; Sealy, B.J. ; Gwilliam, R.
Author_Institution :
Sch. of Electr. & Electron. Eng., Manchester Univ., UK
Abstract :
We have investigated the effects of Fe-ion bombardment at 77 K temperature in the electrical isolation of n- and p- type InGaAs layers. Maximum resistivity of ∼4×106 and ∼7×106 Ω/sq at optimum annealing temperature of ∼250 and 600°C has been recorded for p- and n- type InGaAs materials, respectively. Also, low dissipation loss comparable to S.I. InP substrate has been observed. Thermally stable high resistive regions close to intrinsic value of InGaAs (∼107 Ω/sq) and good RF dissipation loss have been achieved. To the best of our knowledge these results are reported here for the first time.
Keywords :
III-V semiconductors; annealing; electrical resistivity; gallium arsenide; indium compounds; ion beam effects; iron; 77 K; In0.53Ga0.47As; InP; InP substrate; annealing temperature; cold Fe-ion bombardment; dissipation loss; electrical isolation; high-resistive n-type In0.53Ga0.47As layer; high-resistive p-type In0.53Ga0.47As layer; resistivity; Annealing; Conductivity; Indium gallium arsenide; Indium phosphide; Microwave devices; Optical device fabrication; Optical materials; Sheet materials; Temperature; Thermal resistance;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517513
