DocumentCode
2174241
Title
Deep levels characterization in high temperature iron implanted InP
Author
Fraboni, B. ; Gasparotto, A. ; Cesca, T. ; Verna, A. ; Impellizzeri, G. ; Priolo, F.
Author_Institution
Dipt. di Fisica, Bologna Univ., Italy
fYear
2005
fDate
8-12 May 2005
Firstpage
410
Lastpage
413
Abstract
We have investigated the electrical activation of Fe implanted in InP in different concentrations and we have characterized by DLTS and by C-V analyses the electrical activity of the deep levels present in the band gap.
Keywords
III-V semiconductors; deep level transient spectroscopy; deep levels; energy gap; impurity states; indium compounds; iron; C-V analysis; DLTS; InPFe; band gap; deep level; electrical activity; high temperature iron implanted InP; Atom optics; Capacitance-voltage characteristics; Doping; Indium phosphide; Iron; Lattices; Optical materials; Photonic band gap; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517514
Filename
1517514
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