DocumentCode
2174263
Title
Investigation of Zn diffusion into InP which preliminary thermal treated in nitrogen atmosphere
Author
Akhmedova, M. ; Smirnov, A.S.
Author_Institution
Phys.-Tech. Inst. Acad. of Sci., Uzbekistan
fYear
2005
fDate
8-12 May 2005
Firstpage
414
Lastpage
415
Abstract
Preliminary thermal treatment of InP in nitrogen atmosphere before Zn diffusion process creates thin protective layer on the surface of semiconductor, which prevent evaporation of P and by this it reduces degradation of surface layer.
Keywords
III-V semiconductors; diffusion; evaporation; indium compounds; protective coatings; zinc; InP; InPZn; Zn diffusion; evaporation; nitrogen atmosphere; semiconductor surface degradation; thin protective layer; Atmosphere; Diffusion processes; Heat treatment; Hydrogen; Indium phosphide; Nitrogen; Protection; Surface treatment; Thermal degradation; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517515
Filename
1517515
Link To Document