• DocumentCode
    2174292
  • Title

    Study of photoluminescence and deep-level defects in Be-doped InGaAsN

  • Author

    Xie, S.Y. ; Yoon, S.F. ; Wang, S.Z.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    416
  • Lastpage
    418
  • Abstract
    We have investigated the temperature-dependent photoluminescence and deep-level defects in Be-doped, p-type In0.03Ga0.97As0.99N0.01 grown by radio frequency plasma-assisted solid source molecular beam epitaxy.
  • Keywords
    III-V semiconductors; beryllium; deep levels; gallium compounds; indium compounds; photoluminescence; semiconductor epitaxial layers; wide band gap semiconductors; Be-doped In0.03Ga0.97As0.99N0.01; Be-doped p-type InGaAsN; InGaAsN:Be; deep-level defects; molecular beam epitaxy; radiofrequency plasma-assisted solid source MBE; temperature-dependent photoluminescence; Gallium arsenide; Molecular beam epitaxial growth; P-n junctions; Photoluminescence; Plasma applications; Plasma sources; Plasma temperature; Radio frequency; Solids; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517516
  • Filename
    1517516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2174292