DocumentCode :
2174292
Title :
Study of photoluminescence and deep-level defects in Be-doped InGaAsN
Author :
Xie, S.Y. ; Yoon, S.F. ; Wang, S.Z.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
416
Lastpage :
418
Abstract :
We have investigated the temperature-dependent photoluminescence and deep-level defects in Be-doped, p-type In0.03Ga0.97As0.99N0.01 grown by radio frequency plasma-assisted solid source molecular beam epitaxy.
Keywords :
III-V semiconductors; beryllium; deep levels; gallium compounds; indium compounds; photoluminescence; semiconductor epitaxial layers; wide band gap semiconductors; Be-doped In0.03Ga0.97As0.99N0.01; Be-doped p-type InGaAsN; InGaAsN:Be; deep-level defects; molecular beam epitaxy; radiofrequency plasma-assisted solid source MBE; temperature-dependent photoluminescence; Gallium arsenide; Molecular beam epitaxial growth; P-n junctions; Photoluminescence; Plasma applications; Plasma sources; Plasma temperature; Radio frequency; Solids; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517516
Filename :
1517516
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2174292
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