Title :
Eigen states of valence-band in In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells using transmission spectroscopy
Author :
Tanaka, Kiyoshi ; Kotera, N. ; Mishima, T.
Author_Institution :
Hiroshima City Univ., Japan
Abstract :
Transmission of a lattice matched In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells (MQWs) structure irradiated with halogen lamp was measured at room temperature. Fine steplike structures accentuated by the exciton peaks of interband transitions were observed in the In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells structures by transmission spectroscopy. Below 120 K, a third light-hole transition appeared. Energy of the three light-hole transition was lower than one expected with calculation. The lower energy of the three light-hole transition might suggest nonparabolicity of the light-hole.
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; indium compounds; semiconductor quantum wells; valence bands; wide band gap semiconductors; 120 K; In0.53Ga0.47As-In0.52Al0.48As; In0.53Ga0.47As-In0.52Al0.48As multiquantum wells; exciton peaks; halogen lamp irradiation; interband transitions; lattice matched MQWs; light-hole transition; nonparabolicity; transmission spectroscopy; valence-band eigenstates; Detectors; Excitons; Indium phosphide; Laboratories; Lamps; Lattices; Quantum well devices; Spectroscopy; Temperature dependence; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517517
