• DocumentCode
    2174349
  • Title

    Dynamics of carrier-capture processes in Ga0.47In0.53As/InP near-surface quantum wells

  • Author

    Symonds, Clémentine ; Mangeney, Juliette ; Saint-Girons, Guillaume ; Sagnes, Isabelle ; Meunier, Karine ; Garnache, Arnaud

  • Author_Institution
    Inst. d´´Electronique Fondamentale, Univ. de Paris-Sud, Orsay, France
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    424
  • Lastpage
    426
  • Abstract
    Ga0.47In0.53As/InP single-quantum wells with thin top barrier layers of InP and InAlAs have been studied by pump-probe experiments and photoluminescence spectroscopy. The excitonic lifetime is reduced by a fast trapping mechanism of carriers into surface states.
  • Keywords
    III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; hole traps; indium compounds; photoluminescence; semiconductor quantum wells; surface recombination; surface states; Ga0.47In0.53As-InP; InAlAs; barrier layers; carrier trapping mechanism; carrier-capture processes; excitonic lifetime; near-surface single quantum wells; photoluminescence spectroscopy; pump-probe experiment; surface states; Charge carriers; Delay effects; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Photoluminescence; Radiative recombination; Spectroscopy; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517519
  • Filename
    1517519
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2174349