Title :
Thermoelectric property of (Ca,M)TiO3 by ab initio calculation
Author :
Isobe, T. ; Sugihara, S. ; Minowa, A. ; Katanahara, H.
Author_Institution :
Dept. of Mater. Sci. & Ceramic Technol., Shonan Inst. of Technol., Fujisawa, Japan
Abstract :
We study the thermoelectric property of CaTiO3 by electronic structure calculations. CaTiO3 is an insulator with a high band gap possessing low electrical and thermal conductivity. The DV-X a (discrete variational-X a) method is used. The calculation needs atomic number, position of atoms, kind of atoms and symmetry data for the cluster. We calculated the perovskite type of calcium titanate (CaTiO3). This cluster, with transition metal-additions (Ca,M)TiO3 forms p-type and n-type semiconductors possessing impurity energy levels of the donor and acceptor between the HOMO (highest occupied molecular orbital) and LUMO (lowest unoccupied molecular orbital). We assumed the Seebeck coefficient depends on the energy gap based on the computer simulation of Sugihara et al. (1999). We substituted Sr and Nb for Ti in CaTiO3 and the Seebeck coefficient was calculated from HOMO, LUMO level and the impurity levels. Then the Seebeck coefficient at 500 K was calculated to be 7166 μ V/K for CaTiO3, 1806 μ V/K for Nb-added CaTiO3 and 896 μ V/K for Sr-added CaTiO3, respectively
Keywords :
Seebeck effect; Xalpha calculations; ab initio calculations; calcium compounds; electronic density of states; energy gap; impurity states; insulating materials; niobium; semiconductor materials; strontium; 500 K; CaTiO3; CaTiO3:Nb; CaTiO3:Sr; DV-X a method; HOMO; LUMO; Seebeck coefficient; ab initio calculation; discrete variational-X a; energy gap; impurity energy levels; insulators; n-type semiconductor; p-type semiconductor; perovskite structure; thermoelectric materials; transition metal-additions; Calcium; Computer simulation; Dielectrics and electrical insulation; Energy states; Orbital calculations; Photonic band gap; Semiconductor impurities; Thermal conductivity; Thermoelectricity; Titanium compounds;
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-7205-0
DOI :
10.1109/ICT.2001.979862