DocumentCode :
2174428
Title :
Study of the defects in InP:Fe using time-resolved reflection spectroscopy
Author :
Shihua Huang ; Li, Xi ; Lu, Fang
Author_Institution :
Surface Phys. Lab., Fudan Univ., Shanghai, China
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
432
Lastpage :
433
Abstract :
The photo-excited carrier dynamics in Fe doped InP using time-resolved differential reflection measurement. Considering the influence of the ambipolar and surface recombination velocity on carrier dynamics, the temporal evolution of photo-excited carrier has also investigated. In addition, the measurement of transient photoluminescence is employed.
Keywords :
III-V semiconductors; carrier mobility; crystal defects; indium compounds; iron; reflectivity; surface recombination; time resolved spectra; Fe doped InP; InP:Fe; ambipolar; defect; photoexcited carrier dynamics; surface recombination velocity; time-resolved reflection spectroscopy; transient photoluminescence; Annealing; HEMTs; Indium phosphide; Ion implantation; Iron; Photoluminescence; Physics; Reflection; Surface treatment; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517522
Filename :
1517522
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2174428
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