Estimation of threshold voltage and subthreshold slope of extremely scaled DG MOSFETS

Author

Bhattacherjee, S. ; Biswas, A.

Author_Institution

Dept. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

873

Lastpage

878

Abstract

A two-dimensional (2-D) analytical expression for the surface potential and a mathematical relation for the calculation of the threshold voltage Vt and subthreshold slope S of symmetric double-gate (DG) n-MOSFETs have been derived taking into account the effect of bandgap narrowing due to heavy channel doping and quantum-mechanical (QM) effects. The DG MOSFET has been simulated using the device simulator ATLAS and the simulation values of Vt and S have been extracted for different values of structural dimensions, channel doping concentrations and gate materials. Our analytical results have been validated with 2-D numerical simulation data. Calculated data match well with the simulation results for various devices ensuring the validity of our model.

Keywords

MOSFET; doping; energy gap; quantum theory; surface potential; bandgap narrowing; device simulator ATLAS; double-gate metal-oxide semiconductor field effects transistors; heavy channel doping; quantum-mechanical effects; scaled DG MOSFETs; structural dimensions; subthreshold slope; surface potential; threshold voltage; two-dimensional analytical expression; Extremely scaled DG MOSFETs; Subthreshold slope; Threshold voltage;

fLanguage

English

Publisher

iet

Conference_Titel

Information and Communication Technology in Electrical Sciences (ICTES 2007), 2007. ICTES. IET-UK International Conference on

Conference_Location

Tamil Nadu

ISSN

0537-9989

Type

conf

Filename

4735918