DocumentCode :
2174586
Title :
Degradation of metamorphic InGaAs Esaki tunnel diodes due to electrode diffusion and impurity interdiffusion
Author :
Ono, Hideki ; Yanagita, Masashi ; Taniguchi, Satoshi ; Suzuki, Toshi-kazu
Author_Institution :
Adv. Devices R&D Dept., Sony Corp., Kanagawa
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
445
Lastpage :
448
Abstract :
We have investigated degradation of metamorphic In0.53Ga0.47As Esaki tunnel diodes. The degradation due to electrode diffusion and impurity interdiffusion is more prominent than that of lattice-matched In0.53Ga0.47 As Esaki tunnel diodes
Keywords :
III-V semiconductors; chemical interdiffusion; gallium arsenide; indium compounds; tunnel diodes; InGaAs; degradation; electrode diffusion; impurity interdiffusion; lattice-matched In0.53Ga0.47As Esaki tunnel diodes; metamorphic InGaAs Esaki tunnel diodes; Degradation; Electrodes; Gallium arsenide; Gold; Impurities; Indium gallium arsenide; Lattices; Light emitting diodes; Semiconductor diodes; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517527
Filename :
1517527
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2174586
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