Title :
Interconnection of iron disilicide crystal structure parameters with its thermoelectric properties
Author :
Fedorov, M.I. ; Zaitsev, V.K. ; Eremin, I.S. ; Kartenko, N.F. ; Konstantinov, P.P. ; Popov, V.V. ; Kurisu, Masamitsu ; Nakamoto, G. ; Souma, T.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St.Petersburg
Abstract :
The paper is devoted to the study of transport properties of the semiconductor phase of iron disilicide (β-FeSi2) at low temperature. A previous study of kinetic properties of β-FeSi2 showed that there is a very large difference in the thermoelectric properties of a number of samples of the same composition prepared by the same method. No essential difference was found between electrical conductivity at low temperature of single crystals and that of polycrystalline samples of iron disilicide. This paper shows that the smaller the lattice parameters of the sample, the smaller is its electrical conductivity at ~10 K. It is shown that the smallest electrical conductivity at this temperature corresponds to the unit cell of stoichiometric β-FeSi2, or a slightly smaller unit cell than the stoichiometric one. The study of specific heat and magnetic susceptibility of β-FeSi2 at low temperature indicates no phase transition or magnetic ordering at T = 20-25 K corresponding to the break in temperature dependence of electrical conductivity
Keywords :
Seebeck effect; crystal structure; electrical conductivity; iron compounds; lattice constants; magnetic susceptibility; semiconductor materials; specific heat; stoichiometry; β-FeSi2; 10 K; 20 to 25 K; FeSi2; Seebeck coefficient; electrical conductivity; iron disilicide crystal structure parameters; lattice parameters; low temperature; magnetic susceptibility; polycrystalline samples; semiconductor phase; single crystals; specific heat; stoichiometric β-FeSi2; temperature dependence; thermoelectric properties; transport properties; unit cell; Annealing; Casting; Conductivity; Crystallization; Iron; Kinetic theory; Magnetic susceptibility; Resistance heating; Temperature dependence; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-7205-0
DOI :
10.1109/ICT.2001.979871