Performance comparison of InP-based PIN diodes for microwave switch applications

Author

Lee, Bangkeun ; Kim, Taeho ; Yang, Kyounghoon

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol.

fYear

2005

fDate

8-12 May 2005

Firstpage

456

Lastpage

459

Abstract

InP-based PIN diodes having three different epitaxial layer structures, one InGaAs homojunction and two InP/InGaAs heterojunction structures with a different I-layer thickness, have been fabricated and the performance characteristics of the fabricated diodes were characterized and compared for microwave switch applications. Single-pole single-throw (SPST) PIN switches with 50ohm CPW input-output transmission lines were also fabricated to characterize the insertion loss, isolation and power handling capability of the three InP-based PIN diodes

Keywords

III-V semiconductors; coplanar transmission lines; indium compounds; microwave switches; p-i-n diodes; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor switches; CPW input-output transmission line; InGaAs homojunction; InP-InGaAs; InP-InGaAs heterojunction structure; InP-based PIN diode; epitaxial layer structure; insertion loss; isolation; microwave switch application; power handling capability; single-pole single-throw PIN switches; Coplanar waveguides; Diodes; Epitaxial layers; Heterojunctions; Indium gallium arsenide; Indium phosphide; Insertion loss; Power transmission lines; Propagation losses; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

Conference_Location

Glasgow, Scotland

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517530

Filename

1517530